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A: Fachverband Atomphysik

A 22: Interaction with VUV and X-ray light

A 22.13: Poster

Tuesday, March 1, 2016, 16:30–19:00, Empore Lichthof

Experimental determination of Oxygen K-shell fluorescence yield of different Silicon sub-oxides — •Malte L. Wansleben, Philipp Hönicke, Michael Kolbe, and Burkhard Beckhoff — Physikalisch-Technische Bundesanstalt, 10587 Berlin, Germany

The ongoing development of thin film materials for applications in different fields of research and production requires an accurate and reliable composition analysis. If a non destructive quantitative characterization of the elemental composition is needed, often only fundamental parameter based - or even reference free X-ray fluorescence (XRF) spectroscopy is a suitable analytical method. This is due to the extremely low availability of reference materials with sufficient similarity to the analytical problem.

The accuracy of the quantitative results highly depends on the availability of atomic fundamental parameters with uncertainties as low as possible. Especially tabulated fundamental parameters for low Z elements are only available with insufficient large uncertainties. In addition, the question if fundamental parameters of an element are influenced by its chemical environment has to be answered.

To address this question here, the dependency of the oxygen K-shell fluorescence yield - being one of the atomic fundamental parameters - as a function of the oxidation state of silicon is experimentally determined. The experiments were carried out at the plane grating monochromator beamline in the PTB laboratory at the electron storage ring BESSY II, where monochromatized synchrotron radiation of high spectral purity was employed.