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Q: Fachverband Quantenoptik und Photonik
Q 28: Laser Development I
Q 28.1: Talk
Wednesday, March 2, 2016, 11:00–11:15, a310
Nd:Sapphire Ridge Waveguide Laser — •Sven H. Waeselmann1, Sebastian Heinrich1, Christian E. Rüter2, Detlef Kip2, Christian Kränkel1,3, and Günter Huber1,3 — 1Institut für Laser-Physik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany — 2Faculty of Electrical Engineering, Helmut Schmidt Universität, 22043 Hamburg, Germany — 3The Hamburg Centre for Ultrafast Imaging, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany
Sapphire is well known for its outstanding thermo-mechanical properties among the common laser host crystals. It is thus a highly desirable host material for rare-earth (RE) doping. Unfortunately, RE:sapphire cannot be grown in the thermal equilibrium. We performed off-equilibrium growth of Nd:Sapphire films via pulsed laser deposition (PLD). With doping concentrations of 1 at.% Nd, PLD films of 2.6 μm thickness proved to function as planar waveguide lasers. In order to obtain two-dimensional confinement, we applied diamond dicing to the thin films to prepare ridge waveguides. At 2.5 W of incident pump power at a wavelength of 833 nm we obtained a maximum of 116 mW of cw output at 1093 nm with a slope efficiency of 5% in a 47 μm wide ridge waveguide with a length of 8 mm.