Regensburg 2016 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 11: Poster

DF 11.11: Poster

Mittwoch, 9. März 2016, 18:00–20:00, Poster E

Simulation of reaction- and diffusion processes in pores of ultra low k materials using the ReaxFF+ method — •Stephan Pfadenhauer, Oliver Böhm, and Roman Leitsmann — AQcomputare GmbH, Annaberger Str. 240, 09125 Chemnitz

The decreasing feature size of integrated circuits results in a smaller distance between the conduction layers, which is accompanied by an increasing resistance capacitance delay. Therefore, the usage of materials with an ultra low dielectric constant is necessary. However, the application of such ultra low k (ULK) materials is connected to several problems, like the formation of OH-groups after the etch process. This results in moisture uptake and a strongly increasing dielectric constant. To restore the k-value, a post-etch treatment with repair chemicals is recommended. The main problem of using such chemicals are the competing processes of diffusion of the molecules and their reaction with the pore walls. To study the correlation of both processes we have developed a ReaxFF+ parametrization which is able to describe the pore structures, the diffusion of the repair chemicals and their reactions with the hydroxyl groups of the pore walls.