Regensburg 2016 – wissenschaftliches Programm
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DF: Fachverband Dielektrische Festkörper
DF 16: Crystallography in Materials Science (KR with DF, MI)
DF 16.4: Vortrag
Donnerstag, 10. März 2016, 16:40–17:00, H26
Polycrystalline organic semiconductors studies by X-ray nano diffraction — •Clemens Liewald1,2, Simon Noever1,2, Stefan Fischer1, Janina Roemer1, and Bert Nickel1,2 — 1Fakultät für Physik & Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München — 2Nanosystems Initiative Munich, Schellingstrasse 4, 80799 München
The efficiency and reliability of organic semiconducting devices depends strongly on the knowledge of the nanoscale arrangement in the active organic layers. Here, we report on the possibilities of X-ray nanodiffraction to characterize polycrystalline organic thin films at beamline ID01, ESRF, before and after its upgrade. The beam diameter in our measurements is 110 nm at 8.9 keV and 350 nm at 20 keV. We find a high beam damage at 8.9 keV compared to only little damage at 20 keV. First, we apply the focused X-ray beam to a multilayer device, with different organic and inorganic layers, and demonstrate the possibility to measure buried microstructures in e.g. the active organic layer under and next to gold electrodes. Second, we explore the local distribution of two polymorphs in a single pentacene thin film. The lateral shape and distribution of these polymorphs can be mapped with infrared (IR) scanning near-field optical microscopy (SNOM) and is compared to the amplitude from the focused X-ray beam at ID01. In future, the combination of X-ray nanodiffraction with e.g. IR-SNOM as a correlated microscopy will allow to gain various new insights to the influence of the nanoscale crystallinity on the efficiency of organic electronics devices.