Regensburg 2016 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.13: Poster
Montag, 7. März 2016, 17:00–19:00, Poster A
Drastic deviations from stoichiometry transfer during pulsed laser deposition — •Christina Klamt, Arne Dittrich, Christian Eberl, Susanne Schlenkrich, Felix Schlenkrich, Florian Döring, and Hans-Ulrich Krebs — Institute for Materials Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
In common, one of the most characteristic properties of pulsed laser deposition (PLD) is the stoichiometry transfer between target and substrate, which has been used heavily for many complex systems. In this contribution we show that it is yet possible to obtain drastic deviations from stoichiometry transfer in a binary system by just varying the fluence during laser deposition. In the W-Cu system, the W-concentration of films grown from either a W60Cu40 or a W80Cu20 target (wt. %) can indeed continuously be changed over an unprecedented large range of 0 to 75 wt. % W. Close to the deposition threshold, pure Cu-films are formed due to the much higher vapor pressure of Cu. At higher laser fluences, more and more W-rich W-Cu alloy samples are obtained, since ion implantation and intermixing processes occur. These alloys can reach W-contents even higher than that of the target because of enhanced resputtering and reflection of the lighter Cu atoms at the film surface. Stoichiometric films are only obtained at laser fluences around 3 J/cm2, when the strong Cu evaporation from the target and reflection and resputtering effects of Cu at the film surface are in balance.