Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 15: Thermoelectric Materials

DS 15.7: Vortrag

Dienstag, 8. März 2016, 11:30–11:45, H8

Optimized thermoelectric performance of n-type half-Heusler TiNiSn by addition and substitution with Mn — •Enkhtaivan Lkhagvasuren, Siham Ouardi, and Claudia Felser — Max Planck Institute for Chemical Physics of Solids, Dresden, Germany

Half-Heusler compounds have attracted considerable attention as high temperature thermoelectric materials. The state of the art n-type half-heusler compounds are based on TiNiSn. Key to their thermoelectric high efficiency is an intrinsic phase separation by Hf substitution. In the present study, the carrier concentration of the n-type half-heusler compound TiNiSn is optimized by addition and substitution of the low-cost Mn. The power factor is increased and the lattice thermal conductivity reduced with increasing Mn concentration.