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DS: Fachverband Dünne Schichten
DS 16: Layer Properties: Electrical, Optical, and Mechanical
DS 16.9: Vortrag
Dienstag, 8. März 2016, 11:45–12:00, H11
Material parameter determination for ScAlN sputtered layers — •Nicolas Kurz1, 2, Mohammadfazel Parsapourkolour3, Paul Muralt3, Yuan Lu2, Agne Zukauskaite2, Ulrike Roesler4, Pascal Nicolay5, Vadim Lebedev1, 2, and Oliver Ambacher1, 2 — 1Department of Microsystems Engineering IMTEK, University of Freiburg, Freiburg, Germany — 2Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany — 3Ceramics Laboratory, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne, Switzerland — 4EPCOS AG, Munich, Germany — 5CTR AG,Villach , Austria
Microelectromechanical systems operating at radio-frequencies (RF) provide excellent properties for RF front end devices like reference oscillators, filters, and duplexer. Today, AlN is commonly used as piezoelectric material for these devices since it provides low acoustic and dielectric losses, and is compatible with CMOS fabrication technology. However, AlN piezoelectric coefficient d33~6 pC/N, and consequently, electromechanical coupling coefficient of ~7 %, limit the available bandwidth for RF components. Akiyama, et al. showed experimentally that the d33 can be increased up to 400 % by alloying AlN with ScN.
In order to determine selected tensor components for AlScN material constants, a set of test resonators have been modeled in this work using finite element method. Based on these results, four different resonator structures operating in different modes were selected for fabrication and characterization by S-parameter analyses and laser Doppler vibrometry. A comparison between model prediction and experimentally obtained results for AlN and AlScN will be presented.