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DS: Fachverband Dünne Schichten
DS 18: 1D Metal Wires on Semiconductors I
(Joint session of DS and O, organized by O)
DS 18.6: Talk
Tuesday, March 8, 2016, 12:00–12:15, S052
Interwire coupling of In(4× 1) reconstruction probed by transport measurements — •Ilio Miccoli1, Frederik Edler1, Stephanie Demuth1, Herbert Pfnür1, Stephan Wippermann2, Andreas Lücke3, Wolf G. Schmidt3, and Christoph Tegenkamp1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — 2Grenzflächenchemie und Oberflächenphysik, Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany — 3Lehrstuhl für Theoretische Physik, Universität Paderborn, 33098 Paderborn, Germany
The In(4× 1)/Si(111) reconstruction is used as a prototype for the understanding of 1D systems of atomic chains. It shows strong anisotropic transport properties and a temperature driven metal-insulator transition. Although being intensively studied for more than one decade the effect of defects induced by adsorption (e.g. O2, H2) are still under current debate. A better understanding of the influence of defects and a correlation with transport measurements can be achieved by a spatial constriction of the electron path. This restriction was realized by optical ex-situ lithography with reactive ion etching. We report a systematic investigation of the confinement effects using a 4-tip STM/SEM system. Moreover, O2 adsorption dependent transport studies show not only a reduction of conductivity along the direction of atomic chains but also a decrease in the perpendicular. This was not reported before and reveals an effective interwire coupling between the chains, which is in agreement with recent DFT calculations.