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DS: Fachverband Dünne Schichten
DS 24: 1D Metal Wires on Semiconductors II
(Joint session of DS and O, organized by O)
DS 24.8: Talk
Tuesday, March 8, 2016, 15:45–16:00, S052
Capping of rare earth silicide nanowires on Si(001) — •Stephan Appelfeller1, Martin Franz1, Milan Kubicki1, Paul Reiß2, Tore Niermann2, Markus Andreas Schubert3, Michael Lehmann2, and Mario Dähne1 — 1Institut für Festkörperphysik, TU Berlin, 10623 Berlin — 2Institut für Optik und Atomare Physik, TU Berlin, 10623 Berlin — 3IHP - Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder)
Rare earth silicide nanowires are promising candidates for the use of one-dimensional metals in future applications, but they are not stable under ambient conditions. Thus, a protective layer is needed. Here, the capping of Tb and Dy silicide nanowires grown on Si(001) by Si overlayers was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy, also with energy dispersive X-ray analysis. Amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along {111} lattice planes. This behavior is most probably related to strain due to the lattice mismatch between the Si overlayer and the nanowires.
This work was supported by the DFG (FOR1700, project E2).