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DS: Fachverband Dünne Schichten
DS 3: Phase Change / Resistive Switching
DS 3.1: Vortrag
Montag, 7. März 2016, 09:30–09:45, H8
MemFlash: Memristive operation mode of floating gate transistors — •Henning Winterfeld1, Nico Himmel1, Martin Ziegler1, Henning Hanssen2, Detlef Friedrich2, Wolfgang Benecke2, and Hermann Kohlstedt1 — 1Nanoelektronik, Technische Fakultät, Christian-Albrechts Universität zu Kiel, Germany — 2Fraunhofer-Institut für Siliziumtechnologie (ISIT), Itzehoe, Germany
Memristive devices have great potential for the use as key elements in neuromorphic circuits. However, the system integration which requires a wafer level fabrication technology has turned out to be difficult. Therefore, MemFlash cells, i.e. single floating gate transistors operating in a memristive operation mode, are an interesting alternative to state-of-the-art memristive devices. Here, a semi-industrial fabrication process is presented, which allows us to tailor the device properties by using different gate stacks. Fabricated devices vary in channel length and width with tunneling windows between 4 µ m2 and 100 µ m2. Furthermore, tunnel barrier thicknesses between 3 nm up to 7 nm were realized. First hysteresis measurements show on-off resistance values of about 260 kOhm and 680 kOhm, respectively. The electrical characteristics of these devices will be presented, while based on this data, possible advantages and disadvantages of the MemFlash device with respect to conventional memristive devices will be discussed.
Financial support by the German Research Foundation through FOR 2093 is gratefully acknowledged.