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DS: Fachverband Dünne Schichten
DS 3: Phase Change / Resistive Switching
DS 3.11: Talk
Monday, March 7, 2016, 12:15–12:30, H8
Metalorganic vapour phase deposition of indium-antimony-tellurium nanostructures — •Kristof Keller, Martin Schuck, Martina von der Ahe, Gregor Mussler, Hilde Hardtdegen, and Detlev Grützmacher — Forschungszentrum Jülich GmbH, Peter Grünberg Institute (PGI-9), JARA, 52425 Jülich, Germany
In the search for future non-volatile memories, phase change materials (PCM) are a promising prospect due to their fast switching speeds and high scalability. Alloys from the ternary system germanium-antimony-tellurium are mostly used commercially, so far. Compared to these materials, indium-antimony-tellurium, also a PCM, has advantages including higher crystallization and melting temperatures, leading to enhanced retention at elevated temperatures. Also lower reset currents and the capability of multilevel data storage were reported. Nanostructures like nanowires are called for as they are self-heating elements, thus facilitating the switching mechanism. They also reduce the volume of the switched material.
Here, we present the MOCVD growth of In-Sb-Te nanostructures on a Si substrate using dimethylaminopropyldimethyl-indium (DADI), trimethylindium (TMIn), triethylantimony (TESb) and diethyltellurium (DETe) as precursors and pure N2 as carrier gas. The deposited nanostructures were characterized by means of scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction. The influence of reactor pressure, growth temperature and gas composition on the growth of the nanostructures will be presented in this contribution.