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DS: Fachverband Dünne Schichten

DS 3: Phase Change / Resistive Switching

DS 3.12: Talk

Monday, March 7, 2016, 12:30–12:45, H8

Phase transformation in epitaxial GST thin films grown on Si (111) by Pulsed Laser Deposition — •Isom Hilmi, Andriy Lotnyk, Erik Thelander, Jürgen W. Gerlach, Philipp Schumacher, and Bernd Rauschenbach — Leibniz Institut für Oberflächenmodifizierung (IOM); Leipzig

GeTe-Sb2Te3-based material has been widely applied as a phase change data storage media. Recently, a superlattice GeTe-Sb2Te3 system has been proven to have improved switching characteristics [1,2]. It leads to an investigation of deposition of more ordered or epitaxial Ge-Sb-Te based layers. In this work, the epitaxial layers of Ge2Sb2Te5 (GST) were deposited on Si (111) substrates using pulsed laser deposition (PLD) technique. The crystal structures of the post-annealed epitaxial films were studied by means of x-ray diffraction, energy dispersive and Cs-corrected scanning transmission electron microscopy. The surface morphology was observed by AFM in a taping mode. The as-deposited GST film contains both cubic and hexagonal (h-GST) grain structures. The significant structure change towards h-GST is observed for samples with longer post-annealing up to 7 h, which is, however, also accompanied by loss of Ge.

[1] R. E. Simpson et al., Nat. Nano. 6, 501, (2011). [2] F. Katmis et al., Cryst. Growth Des. 11, 4606, (2011)