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Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 3: Phase Change / Resistive Switching

DS 3.13: Vortrag

Montag, 7. März 2016, 12:45–13:00, H8

Ab initio Simulations of Liquid Phase-Change Materials — •Mathias Schumacher1, Hans Weber2,3, Ivan Kaban2,3, Riccardo Mazzarello1,4, and Pal Jovari51Institute for Theoretical Solid State Physics, RWTH Aachen University, Germany — 2IFW Dresden, Institute for Complex Materials, Dresden, Germany — 3Institute of Materials Science, TU Dresden, Germany — 4JARA FIT and JARA HPC, RWTH Aachen, Germany — 5Department of Complex Fluids, Institute for Solid State Physics and Optics, Wigner RCP of the H.A.S., Hungary

Phase-Change materials (PCMs) undergo fast and reversible transitions between the amorphous and crystalline phase at high temperature. This property is exploited in non-volatile phase-change memories and rewritable optical disks. The liquid state plays a role in both directions of the switching process: the amorphization occurs upon rapid quenching from the liquid state, whereas fast crystallization takes place from the supercooled liquid. Hence, detailed knowledge of the properties of liquid PCMs is crucial for the understanding of the switching phenomenon. Here we present large scale ab initio molecular dynamics (AIMD) simulations of liquid and supercooled liquid PCMs. We consider large models of GeTe, Ge2Sb2Te5 and Ag, In-doped Sb2Te containing about 500-600 atoms and carry out long simulations (of the order of 100 ps) at different temperatures, below and above the melting temperature. We extract structural and dynamic properties from these trajectories, including radial and angle distribution functions and viscosities. The results are in fair agreement with recent experiments.

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