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DS: Fachverband Dünne Schichten
DS 3: Phase Change / Resistive Switching
DS 3.2: Talk
Monday, March 7, 2016, 09:45–10:00, H8
Memristive Functionality of a SONOS Memory Transistor — •Nico Himmel1, Hannes Mähne2, Steffen Thiem2, Henning Winterfeld1, Martin Ziegler1, and Hermann Kohlstedt1 — 1Nanoelektronik, Technische Fakultät der Christian-Albrechts Universität Kiel, Germany — 2X-FAB Dresden GmbH Co. KG, Dresden, Germany
Charge trap transistors of silicon-oxide-nitride-oxide-polysilicon (SONOS) type can be operated as a memristive device. In the talk, a two terminal wiring scheme for single depletion SONOS cells with one additional resistor will be introduced. The all-electric operation principle and established silicon manufacturing process of SONOS devices at the Semiconductor Foundry XFAB promise reliable operation, low parameter spread and large integration density. Experimental current-voltage curves show a pinched hysteretic shape within ±10 V with a polarity dependent asymmetry and Roff/Ron>25 at 0.5 V. In addition the circuit response to voltage pulses, which is relevant for neuromorphic applications, is discussed. The circuit design is an implementation of the MemFlash concept, as proposed for a memristive operation of floating gate transistors [1].
Financial support by the German Research Foundation through FOR 2093 is gratefully acknowledged.
[1] M. Ziegler et al., APL 101, 263504 (2012)