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DS: Fachverband Dünne Schichten
DS 3: Phase Change / Resistive Switching
DS 3.8: Vortrag
Montag, 7. März 2016, 11:30–11:45, H8
Resistive switching in oxygen engineered Al2O3/HfOx based RRAM devices grown by MBE — •Stefan Vogel1, S. U. Sharath1, Erwin Hildebrandt1, Jonas Hunka1, Christian Wenger2, Thomas Schroeder2, and Lambert Alff1 — 1Institute of Materials Science, Technische Universität Darmstadt, Germany — 2IHP, Frankfurt (Oder), Germany
Recently, resistive random access memory (RRAM) has gained a lot of attention due to its promising properties: fast switching times, high endurance, and low power consumption. RRAM devices are non-volatile memories (NVM) based on switching between a low and high resistance state (LRS/HRS) by conducting filaments (CF) which are formed and disrupted by applying voltages of different polarities. RRAM devices usually have a simple metal-insulator-metal stack (MIM) structure. Insulating transition metal oxides like hafnium oxide (HfO2) are promising for embedded RRAM due to its established CMOS compatibility.
In-situ stacks of TiN/HfOx with oxygen deficient stoichiometry were deposited by molecular beam epitaxy (MBE) using radical sources with different gases (oxygen and nitrogen) [1]. Device stacks of Pt/HfOx/TiN with varying device areas were patterned using lithography. Since the forming process of the filament is crucial for
good device endurance, the temperature of formation was varied to investigate its influence on the forming process and the endurance. The effect of Al2O3 interlayers acting as oxygen diffusion barriers on switching performance has also been investigated.
S. U. Sharath et al., Appl. Phys. Lett. 104, 063502 (2014).