DPG Phi
Verhandlungen
Verhandlungen
DPG

Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 32: 2D Materials: Growth
(Joint session of DS and O, organized by O)

DS 32.2: Vortrag

Mittwoch, 9. März 2016, 10:45–11:00, S053

Synthesis of high quality TaS2 monolayer using molecular beam epitaxy — •Arlette S. Ngankeu, Charlotte E. Sanders, Marco Bianchi, Maciej Dendzik, and Philip Hofmann — Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark

The transition metal dichalcogenide TaS2 has been intensively studied in its bulk form due to the rich properties arising from the interplay of electronic instabilities. As in many other materials, the electronic properties of TaS2 might change in interesting ways in the thickness limit of a single layer. However, finding a good method for the production of high quality single layer TaS2 is still a big challenge, and the thinnest crystals of TaS2 obtained so far (by exfoliation of the TaS2 bulk) actually have thicknesses of a few monolayers. In this talk, we report the first successful preparation of single- and few-layered TaS2 on the Au(111) substrate by molecular beam epitaxy. Scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy have been used to probe the surface topography and electronic properties of TaS2/Au.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg