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DS: Fachverband Dünne Schichten
DS 8: Thin Film Characterisation: Structure Analysis and Composition I
DS 8.2: Talk
Monday, March 7, 2016, 15:30–15:45, H8
Determination of growth quality of thin films by In-situ GISAXS during the deposition process — •Jörg Wiesmann1, Peter Siffalovic2, Karol Vegso2, and Martin Hodas2 — 1Incoatec GmbH, Geesthacht, Germany — 2Inst. of Physics, Slovak Acad. of Sci., Bratislava, Slovakia
We present how the growth of thin films can be investigated during the deposition by means of grazing incidence small angle X-ray scattering (GISAXS). These experiments are typically done only at synchrotrons. They are now also feasable in the home-lab by using modern microfocus sources like the air cooled IµS.
The IµS is explained in more detail. It is a high-brilliance X-ray source for diffractometry and available with Cr, Co, Cu, Mo, and Ag anodes. It is equipped with a 2-dim beam shaping multilayer optic. We can form either a collimated beam with low (below 0.5 mrad) or a focusing beam with higher divergence (up to 10 mrad) and very small focal spots below 100 µm.
In our presentation we give an overview of experiments and results demonstrating the potential of the IµS in in-situ GISAXS studies. We present 2 applications in detail:
1) Multilayers deposited by ion beam assisted deposition: This experiment was done only at synchrotrons. With an IµS it becomes feasible in the home-lab.
2) Growth of thin metallic layers on graphene: The difference between production by PVD and Thermal Deposition is discussed.