Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: Photovoltaics (Joint session of HL and DF, organized by HL)

HL 12.11: Vortrag

Montag, 7. März 2016, 18:00–18:15, H2

Plasma-enhanced atomic-layer-deposited MoO_x emitters for silicon heterojunction solar cells — •Johannes Ziegler¹, Thomas Schneider¹, Alexander N. Sprafke¹, Kai Kaufmann^3,4, and Ralf B. Wehrspohn^{1 ,2} — ¹Martin-Luther-University Halle-Wittenberg, µMD Group, Institute of Physics, Heinrich-Damerow-Strasse 4, 06120 Halle, Germany — ²Fraunhofer Institute for Mechanics of Materials IWM Halle, Walter-Hülse-Str. 1, 06120 Halle, Germany — ³Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeld-Strasse 12, 06120 Halle, Germany — ⁴Hochschule Anhalt Köthen, University of Applied Sciences, Bernburger Str. 55, 06966 Köthen

A method for the deposition of molybdenum oxide (MoO_x ) with high growth rates at temperatures below 200 ^∘C based on plasma-enhanced atomic layer deposition (PE-ALD) is presented. The stoichiometry of the of the over-stoichiometric MoO_x films can be adjusted by the plasma-parameters. First results of these layers acting as hole-selective contacts in silicon heterojunction (SHJ) solar cells are presented and discussed.