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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 25: Quantum Information Systems (Joint session of HL and TT, organized by HL)

HL 25.10: Vortrag

Dienstag, 8. März 2016, 12:15–12:30, H15

Controlled Implantation of Silicon Vacancy Layers for Quantum Applications in Bulk Silicon Carbide — •H. Kraus1,2, C. Kasper2, S.-I. Sato1, M. Haruyama1, S. Onoda1, T. Makino1, T. Ohshima1, G. Astakhov2, and V. Dyakonov2,31Japan Atomic Energy Agency, Takasaki, Gunma, Japan — 2Exp. Physics VI, Julius Maximilian University of Würzburg — 3ZAE Bayern, Würzburg

Quantum centers in silicon carbide (SiC) have already transcended their former reputation as mere performance-hampering defects. Their long spin lifetime, unique spin-preserving optical pumping mechanism[1], and the possibility of downscaling to single-photon source level[2,3] makes them viable candidates for a plethora of quantum applications in sensing, rf devices, and quantum computing.

One quantum center species, the silicon vacancy (VSi), can be reliably and homogeneously produced in the bulk by electron or neutron[3] irradiation. In contrast, a method to implant defects at a specific depth would be very interesting, especially when aiming for spatially separated centers for single photon sources. We present a study on proton irradiation to create a layer of VSi in an irradiation-energy-tunable depth in bulk SiC. We discuss the spectroscopic response of this layer, and compare the VSi depth profile—measured by confocal microscopy—with the H+ stopping power of silicon carbide. Finally, we extend this study on the effects of high energy heavy ion damage.

[1] H. Kraus et al., Nature Phys. 10, 157 (2014)

[2] M. Widmann et al., Nature Mater. 14, 164 (2015)

[3] F. Fuchs et al., Nature Commun. 6, 7578 (2015)

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