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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.20: Poster

Tuesday, March 8, 2016, 15:00–19:00, Poster A

The structure and electrical properties of Se hyperdoped Si by ion implantation followed by short-time annealing — •Fang Liu^1,2, Slawomir Prucnal¹, Ye Yuan^1,2, Kun Gao^1,2, Yonder Berencén¹, Lars Rebohle¹, Wolfgang Skorupa¹, Manfred Helm^1,2, and Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany — ²Technische Universität Dresden, Dresden, Germany

Si hyperdoped with Se layers was obtained by ion implantation of 60 keV Se at fluence of 5*1E15 cm-2 followed by both pulsed laser annealing (PLA) and flash lamp annealing (FLA). We show that the degree of crystalline lattice recovery of the implanted layers and the Se substitutional fraction depend on the pulse duration and energy density of FLA and PLA. While the annealing at low energy densities leads to an incomplete recrystallization, annealing at higher energy densities results in more defects. The impurities have more chance of redistribution if the sample is maintained at higher temperature for longer time. The electrical properties of the implanted layers can be well correlated to the structural properties resulted from different annealing processing.