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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.22: Poster

Tuesday, March 8, 2016, 15:00–19:00, Poster A

Si Nanowires Prepared by Glancing Angle Deposition Technique — •Andrii Kulyk¹, Christoph Grüner¹, Andriy Lotnyk¹, Dietmar Hirsch¹, Gal Schkolnik², Isom Hilmi¹, and Bernd Rauschenbach¹ — ¹Leibniz Institute of Surface Modification, Permoserstr. 15, D-04318, Leipzig, Germany — ²Helmholtz Centre for Environmental Research, Permoserstr. 15, D-04318, Leipzig, Germany

Si nanostructures can be engineered to form a variety of useful shapes by glancing angle deposition there has been recent interest in this new materials class. For example, they can be used as optical sensor, porous electroluminescent material or solar absorber. In this work Si nanostructures are obtained by glancing angle deposition and studied by TEM, XRD, SEM and confocal Raman spectroscopy at various parameters. The nanosphere lithography is used to realize ordered Si nanostructure pattern. Epitaxial and crystalline structures of SiNWs were achieved. Raman spectra have shown high intensity peaks from Si nanostructures in a region from 517 cm-1 to 523 cm-1, which is well agreed with literatures data. XRD investigations identified Si peaks orientated to (111) and (220). The growth of crystalline structure is possible in temperature region 400 - 680 °C.