Regensburg 2016 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.24: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Structure and chemistry of crystalline silicon-aluminum oxide interfaces — •Arne Ahrens, Patrick Peretzki, and Michael Seibt — IV. Physikalisches Institut, Georg-August Universität Göttingen, Germany
Aluminum oxide deposited on crystalline silicon by atomic layer deposition (ALD) is known for its high surface passivation capabilities. This surface passivation is attributed to a high negative fixed charge density of about -4×1012cm−2[1] in the aluminum oxide layer close to the silicon-aluminum oxide interface [2]. This makes aluminum oxide an interesting material to increase the efficiency of solar cells by passivation of surface states. Examples of use are passivated emitter and rear cells (PERC) [3] and rear-emitter inversion layer solar cell [4], for which efficiencies of 20% [3] and 18,1% [4] have been reported, respectively.
In this work, we apply transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDX) to study the structure and chemistry of the interface of crystalline silicon and aluminum oxide deposited by ALD for different production parameters, as e.g. post-deposition heat treatments or layer thickness. In addition, we investigate the influence of UV irradiation on the structure and chemistry of the silicon-aluminum oxide interface. [1] F. Werner and J. Schmidt Appl. Phys. Lett. Vol.104, 091604 (2014). [2] B. Hoex et al., J. Appl. Phy. Vol.104, 113703 (2008). [3] J. Schmidt et al., Prog. Photovol: Res. Appl. Vol. 16 461-466 (2008). [4] F. Werner et al., J. Appl. Phy. Vol. 115, 073702 (2014).