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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.25: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

On deep level transient spectroscopy of extended defects in n-type 4H-SiC — •Jonas Weber, Heiko Weber, and Michael Krieger — Department of Physics, Applied Physics, FAU Erlangen-Nuremberg, Germany

Deep level transient spectroscopy (DLTS) is an electrical measurement technique used for the investigation of point defects having deep levels in the bandgap of semiconductors. In defective materials, negative DLTS signals are frequently observed and ascribed to extended defects, although the origin is not yet understood. We have investigated triangular shaped extended defects in lightly nitrogen doped n-type 4H-SiC epitaxial layers by means of DLTS. For this purpose, triangular defects have been located by photoluminescence mapping and scanning electron microscopy. Schottky contacts for DLTS investigations have been prepared on top of those defects. DLTS measurement parameters, i. e. reverse bias, pulse bias and pulse length have been varied to gain insight into the electrical behavior of the system. It has been found that the appearance of negative DLTS signals depends on the choice of measurement parameters. A model is developed that qualitatively explains the DLTS spectra observed.