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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.26: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
ion implantation induced damage in nonpolar a-plane GaN films — •Fengfeng Cheng1,2, Lin Li2, Slawomir Prucnal2, M. X. Feng3, Qian Sun3, J. Grenzer2, M. Helm2, and Shengqiang Zhou2 — 1key Lab of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing Radiation Center, Beijing 100875, China — 2Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P. O. Box 510119, Dresden 01314, Germany — 3key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China
In this study, we investigated ion implantation induced damages in nonpolar alpha-plane GaN films. X-ray diffraction (XRD), Raman scattering, Rutherford backscattering/channeling (RBS/C), are employed to study samples with different implantation fluences. For Si implanted samples, with increasing the implanted fluences, besides the main (102) peak from the XRD 2θ/θ scan, a bump peak is observed and shifts to a lower angle, which indicates the lattice expansion. It is consistent with newly arising peaks in the Raman spectra, which may associate with the lattice disorder and distortion caused by radiation damage. RBS/C results are also provided as complement to evidence the preview conclusion.