Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.27: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Annealing behavior of Er implanted GaN — •Fengfeng Cheng1,2, Linxiang Chi2, Ding Li3, Slawomir Prucnal2, Fang Liu2, René Heller2, M. Helm2, Xiaodong Hu3, Guoyi Zhang3, and Shengqiang Zhou2 — 1Key Lab of Beam Technology and Material Modification of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing Radiation Center, Beijing 100875, China — 2Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P. O. Box 510119, Dresden 01314, Germany — 3Research Centre for Wide-gap Semiconductor, State Key Laboratory of Artificial Microstructure and Mesosciopic Physics, School of Physics, Peking University, Beijing 100871, China
In this study, we report the annealing behavior of 100 keV Er-implanted GaN with fluence of 1E15/cm2. The microstructural and optical property evolution of samples with different thermal treatment is studied by room temperature photoluminescence (PL), Raman spectra, and Rutherford backscattering. From the results, we try to establish a correlations between microstructural and optical properties. The PL peak around ~1540 nm is clearly observed for all as-implanted and post-annealed samples, with increasing annealing temperature, the PL peak intensity reaches to maximum at annealing temperature of 900 , while the PL intensity reduction with further higher temperature annealing ( namely 1050 ) could be attributed to reduction of optically active Er sites , while RBS/C results shows the out diffusion of Er with increasing annealing temperature.