Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.29: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Structural and optical properties of a GaN/AlN quantum heterostructure — •Alexander Reuper1, Gordon Schmidt1, Silke Petzold1, Peter Veit1, Konrad Bellmann2, Tim Wernicke2, Frank Bertram1, Michael Kneissl2, and Jürgen Christen1 — 1Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany — 2Institute of Solid State Physics, Technical University Berlin, Germany
III-nitride based quantum dots (QD) are promising candidates for room-temperature quantum emitters due to the large exciton binding energies and strong confinement of this material system. Using transmission electron microscopy combined with cathodoluminescence spectroscopy (STEM-CL) we report on structural and spatially resolved optical properties of a GaN/AlN heterostructure with GaN grown under low V/III ratio to promote QD formation.
The GaN layer has been grown by metal-organic vapor phase epitaxy on a c-plane AlN/sapphire template at 1050°C and immediately capped by AlN.
Structural investigations showed a continuously formed GaN layer with local thickness fluctuations. Nanoscale cathodoluminescence measurements at room temperature as well as 16 K revealed spots of high intensity within GaN-layer. Highly spatially resolved CL investigations show various sharp emission peaks around 300 nm from these spots.