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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.30: Poster

Tuesday, March 8, 2016, 15:00–19:00, Poster A

Time-resolved photoluminescence spectroscopy of InGaN nanowires — •Vanessa Dahmen¹, Nils W. Rosemann¹, Pascal Hille², Jörg Schörmann², Felix Walther², Martin Eickhoff², and Sangam Chatterjee¹ — ¹Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — ²I. Physical Institute, Justus-Liebig-Universität Gießen, Gießen, Germany

The incorporation of Indium into GaN drastically reduced the band gap of the alloy material. This shift towards the visible regime is exploited in the active material of commercially available blue and green laser diodes. Nanowires (NW) provide a good model system to investigate the intrinsic effects of alloying as they are virtually free of defects due to their self-assembled growth. Here, we study two series of (Ga,In)N NWs by time-resolved photoluminescence. The samples were grown by plasma-enhanced molecular beam epitaxy under different growth conditions. In particular, effects of the plasma power or the nitrogen flux are studied by systematic variations during growth. The time-resolved photoluminescence spectroscopy reveals ensembles of 3 states with similar decay dynamics are found for both series while the spectral position of the peak emissions are shift towards lower energies with increasing nitrogen flux.