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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.32: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Optical Characterization of GaN:Fe — •Sebastian Bauer1, Matthias Hocker1, Benjamin Neuschl1, Maria L. Gödecke1, Martin Klein2, Frank Lipski2, Eberhard Richter3, Ferdinand Scholz2, and Klaus Thonke11Institute of Quantum Matter, Semiconductor Physics Group, University Ulm — 2Institute of Optoelectronics, University Ulm — 3Ferdinand-Braun Institute, Berlin

Nominally undoped GaN is typically n-type in the range of some [n]=1016-1019 cm−3 carriers introduced by uncontrolled silicon and oxygen impurities. To remove this background conductivity, incorporation of iron on Ga sites acting as deep acceptors is a viable way to create so-called semi-insulating material, similar to semi-insulating GaAs:Fe. The electrical Fe2+/Fe3+ level associated with Fe in GaN is located some 0.6 eV below the conduction band.

In the present study we present electrical and mainly optical data of thick GaN:Fe layers grown by hydride vapour phase epitaxy, using a ferrocen source for Fe. The samples show different concentrations of iron and background donors incorporated, and thus different degrees of compensation. In optical absorption measurements, we established – based on secondary ion mass spectrometry and electrical data – a correlation between the absorption signal and the actually present compensation status of iron.

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