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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.4: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Fine structure and coherent spin manipulation of the hidden transition of VSi in 4H-SiC — •Matthias Niethammer1, Sang-Yun Lee1, Matthias Widmann1, Ian Booker2, Torsten Rendler1, Takeshi Oshima3, Nguyen Tien-Son2, Erik Janzón2, and Joerg Wrachtrup1 — 13.Physikalisches Institut, Universitaet Stuttgart — 2Department of Physics, Chemistry and Biology, Linkoeping University — 3Japan Atomic Energy Agency, Takasaki
Silicon carbide has recently been recognized as a promising host material for mainstream room temperature quantum devices based on defects [1]. The silicon vacancy is a point defect with a spin 3/2 ground state and a zero field splitting of 70MHz which allows for optical control and coherent manipulation even on the single spin level at room temperature [2]. As high impurity density is detrimental for defect based solid state quantum systems, wafer quality is a concern. Here we analyse various fine structures in optically detected spin signal at low magnetic field and present likely models related to wafer quality for their origin. When an axial magnetic field is applied, the spin Hamiltonian predicts three transitions, but usually only two are visible due to equal population. The third transition previously has been revealed by ENDOR measurements [3]. We demonstrate the hidden transition (ms=−1/2↔ ms=1/2) also becomes optically observable by inducing population difference using ELDOR. Additionally we present the coherent manipulation of this hidden transition. 1. Weber et al, PNAS 2010 107 (19) 8513-8518 2. Widmann et al, Nat. Mater 14, 164-168 (2015) 3. Mizuochi et al, Phys. Rev. B 72, 235208 (2005)