Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.40: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Spectrally pure deep UV LEDs for gas sensing applications — •Frank Mehnke1, Martin Guttmann1, Johannes Enslin1, Simon Kapanke1, Christian Kuhn1, Hendrik Krüger2, Marian Rabe2, Mickael Lapeyrade3, Ute Zeimer3, Sven Einfeldt3, Tim Wernicke1, Markus Weyers3, and Michael Kneissl1,3 — 1Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2Universität Rostock, Institut für Allgemeine Elektrotechnik, Albert-Einstein.Str. 2, 18059 Rostock, Germany — 3Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12480 Berlin, Germany
Ultraviolet (UV) light emitting diodes (LEDs) emitting at wavelengths near 230 nm could enable compact and highly sensitive NO gas detection systems. Although the required spectral power densities are moderate, spectrally clear single peak emission without parasitic luminescence is of utmost importance. Unfortunately, such very short wavelength LEDs often suffer from various parasitic luminescences which mainly originate from electron leakage into the p-side of the LED and Mg-related deep level transitions. In this contribution, we will present our recent investigations on the influence of the heterostructure design and p-side doping on the charge carrier injection and the emission characteristics of 233 nm LEDs. By optimizing the electron blocking layer thickness as well as the Mg doping concentration of the p-superlattice we were able to achieve single peak 233 nm LEDs with an emission power of 26 µW at 25 mA. Incorporated into a gas detection system those LEDs are capable to detect nitrogen oxide in the ppm range.