Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.42: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Optical Characterization of Ga(N,As,P)/(B,Ga)(As,P)/Ga(N,As,P) Heterostructures — •Julian Veletas1, Peter Ludewig2, Nils W. Rosemann1, Kerstin Volz1, Wolfgang Stolz1,2, and Sangam Chatterjee1 — 1Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, D-35032 Marburg, Germany — 2NAsPIII/V GmbH, Am Knechtsacker 19, D-35041 Marburg, Germany
The quarternary semiconductor alloy Ga(N,As,P) is a promising material system for laser devices on silicon substrates to open up new routes towards off-chip optical data transmission. While the active material Ga(N,As,P) is comparatively well characterized many questions remain regarding the optoelectronic properties of the barrier material (BGa)(AsP). In particular, the hetero-offsets at the (B,Ga)(As,P)/Ga(N,As,P) Interface remain under discussion. Several scenarios discussed including a staggered band alignment, which would offer the potential for advanced W-Laser structures at telecom wavelength. Here, a series of Ga(N,As,P) /(B,Ga)(As,P)/Ga(N,As,P) *W-structures* are investigated by modulation and photoluminescence spectroscopy to identify optically allowed transitions and help to clarify the band alignment.