Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 35: Poster I

HL 35.48: Poster

Tuesday, March 8, 2016, 15:00–19:00, Poster A

Growth of Low Density InAs Quantum Dot Molecules — •Nandlal Sharma and Dirk Reuter — Optoelectronic Materials and Devices, University of Paderborn, Warburgerstr. 100, 33098, Paderborn, Germany

In this contribution, we present a modified gradient approach for the fabrication of low density vertically stacked InAs quantum dots (QDs), so called quantum dot molecules (QDM). The samples were grown by solid source molecular beam epitaxy (MBE) on GaAs (100). The density of the QDMs was varied across the wafer by the following approach: the bottom-layer of QDs was grown without substrate rotation, which resulted in an Indium gradient over the substrate surface, generating a QD density gradient. The emission wavelength of the bottom QDs were controlled by partial capping with 2.2 nm GaAs [1]. After growing a GaAs barrier of 6-18 nm, uncapped top-layer QDs were grown with (!) substrate rotation. The influence of the In amount in the top QD layer and of the GaAs inter-dot barrier thickness will be discussed. References [1] S. Fafard et al., Phys. Rev. B 59, 15368 (1999)