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HL: Fachverband Halbleiterphysik
HL 35: Poster I
HL 35.8: Poster
Tuesday, March 8, 2016, 15:00–19:00, Poster A
Identification and magneto-optical properties of the NV center in 4H-SiC — Hans Jürgen von Bardeleben1, Jean-Louis Cantin1, Soroush Abbasi-Zargaleh2, Benoît Eblé1, Sophie Hameau1, Eva Rauls3, and •Uwe Gerstmann3 — 1INSP, Université Pierre et Marie Curie, 75005 Paris — 2Université Paris-Sud, 91405 Orsay — 3Uni Paderborn, Warburger Strasse 100, 33098 Paderborn
Single spin carrying defects are key elements in quantum information and nanosensing technology with the nitrogen-vacancy (NV) center in diamond being the outstanding example [1], stimulating the search for similar defects in alternative materials with superior material properties. In a combined electron paramagnetic resonance and density functional theory (DFT) study we verify the existence of such NV centers in 4H-SiC in the form of silicon vacancy-nitrogen pairs (VSiNC) and explore their basic magneto-optical properties [2].
Optical polarization of the ground state is indeed very similar to that of the NV center in diamond, whereby in 4H-SiC: (i) the sensitivity with temperature is found to be two times larger, and (ii) the PL spectrum is shifted towards the near infrared. Given the high potential of 4H-SiC as concerns doping and nanostructuring, the NV center in 4H-SiC is expected to be suitable for multiple applications.
[1] M.W. Doherty, N.B. Manson, P. Delaney, F. Jelezko, J. Wrachtrup, and L.C.L. Hollenberg, Physics Reports 528, 1, (2013).
[2] H.J. von Bardeleben, J.L. Cantin, E. Rauls, and U. Gerstmann, Phys. Rev. B 92, 064104 (2015).