Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 36: Poster Ib

HL 36.22: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Very slow decay of a defect related PL emission band in AlN: signatures of the Si related DX state — •Matthias Lamprecht¹, Christiane Grund¹, Benjamin Neuschl¹, Zachary Bryan², Ramón Collazo², Zlatko Sitar², and Klaus Thonke¹ — ¹Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — ²Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA

We investigated the defect related PL emission band at 2.4 eV in aluminum nitride bulk crystals using different methods including time-resolved photoluminescence (TRPL) investigations. Two slow processes with decay times of 13 ms and 153 ms were found for this band in the low-temperature limit. Based on temperature dependent TRPL and PL experiments, the faster process is assigned to a donor-acceptor pair transition (involving a shallow, effective-mass like silicon donor), and the slower process is attributed to a transition between a more localized electron at a silicon DX center and the same deep acceptor.