Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 36: Poster Ib

HL 36.22: Poster

Dienstag, 8. März 2016, 15:00–19:00, Poster A

Very slow decay of a defect related PL emission band in AlN: signatures of the Si related DX state — •Matthias Lamprecht1, Christiane Grund1, Benjamin Neuschl1, Zachary Bryan2, Ramón Collazo2, Zlatko Sitar2, and Klaus Thonke11Institute of Quantum Matter / Semiconductor Physics Group, Ulm University, 89081 Ulm, Germany — 2Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606, USA

We investigated the defect related PL emission band at 2.4 eV in aluminum nitride bulk crystals using different methods including time-resolved photoluminescence (TRPL) investigations. Two slow processes with decay times of 13 ms and 153 ms were found for this band in the low-temperature limit. Based on temperature dependent TRPL and PL experiments, the faster process is assigned to a donor-acceptor pair transition (involving a shallow, effective-mass like silicon donor), and the slower process is attributed to a transition between a more localized electron at a silicon DX center and the same deep acceptor.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2016 > Regensburg