Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Gallium Nitride: Fabrication and Characterization

HL 50.13: Vortrag

Mittwoch, 9. März 2016, 13:00–13:15, H17

Investigation of AlInN/GaN heterostructures by scanning tunneling and transmission electron microscopy — •Verena Portz¹, Jean-François Carlin², Raphaël Butté², Nicolas Grandjean², Rafal Dunin-Borkowski¹, and Philipp Ebert¹ — ¹Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — ²Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Ternary III-V semiconductors are of increasing interest for optoelectronic devices. One of the most promising alloys is Al_1-xIn_xN, since it’s band gap can be tuned from nearly 0.67 eV to 6.2 eV. Due to the high contrast of the refractive index, alternating layers of GaN and Al_1-xIn_xN are also commonly used in distributed Bragg reflectors (DBRs) for laser diodes. In these devices, the indium content is tuned to minimize lattice mismatch. Our investigations by scanning tunneling and transmission electron microscopy show that even in Al_1-xIn_xN layers, nominally lattice matched to GaN, compositional fluctuations can lead to stress and strain. The different strain and compositional effects are discussed.