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Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Gallium Nitride: Fabrication and Characterization

Mittwoch, 9. März 2016, 09:30–13:15, H17

09:30 HL 50.1 Molecular beam epitaxy and characterization of InGaN nanowires on Si (111) — •Saskia Weiszer, Andreas Zeidler, Maximilian Kolhep, and Martin Stutzmann
09:45 HL 50.2 RF sputter deposition of AlN layers on different substrates — •Florian Hörich, Marc Hoffmann, Jürgen Bläsing, Armin Dadgar, and Andre Stritmatter
10:00 HL 50.3 Growth of GaN nanowires on crystalline TiN films by molecular beam epitaxy — •David van Treeck, Gabriele Calabrese, Carsten Pfüller, Oliver Brandt, Lutz Geelhaar, and Sergio Fernández-Garrido
10:15 HL 50.4 Germanium doping of cubic GaN — •Michael Deppe, Jürgen W. Gerlach, Dirk Reuter, and Donat J. As
10:30 HL 50.5 Manipulation of indium incorporation by anisotropic strain in non- and semipolar GaInN/GaN multi quantum well structures — •P. Horenburg, U. Rossow, R. Buss, F. A. Ketzer, H. Bremers, F. Tendille, P. De Mierry, P. Vennéguès, J. Zuniga-Perez, and A. Hangleiter
10:45 HL 50.6 Epitaxieentwicklung AlN/GaN HEMTs für die Leistungselektronik bei hohen Frequenzen — •Birte-Julia Godejohann, Stefan Müller, Lutz Kirste, Steffen Breuer, Rolf Aidam, Klaus Köhler und Oliver Ambacher
  11:00 30 min. Coffee Break
11:30 HL 50.7 MOVPE growth and characterization of GaN based tunnel junctions employing highly Ge-doped GaN — •Silvio Neugebauer, Aqdas Fariza, Marc Hoffmann, Gordon Schmidt, Hartmut Witte, Jürgen Bläsing, Frank Bertram, Armin Dadgar, Jürgen Christen, and André Strittmatter
11:45 HL 50.8 Evaluation and comparison of the intrinsic electric field of semipolar and polar InGaN/GaN QW structures — •Martina Dombrowski, Jan Wagner, Michael Jetter, and Peter Michael
12:00 HL 50.9 Capacitance Voltage Spectroscopy of GaN Quantum Dot Ensembles — •Carlo Alberto Sgroi, Julien Brault, Arne Ludwig, and Andreas D. Wieck
12:15 HL 50.10 Determination of polarization fields in InAlN/GaN heterostructures by capacitance-voltage-measurements — •Baran Avinc, Monir Rychetsky, Konrad Bellman, Ingrid Koslow, Tim Wernicke, Michael Narodovitch, Michael Lehmann, Silvio Neugebauer, Andre Strittmatter, Bernd Witzigmann, and Michael Kneissl
12:30 HL 50.11 Modulation spectroscopy of semipolar InGaN/GaN light emitting diodes — •Stefan Freytag, Monir Rychetsky, Tim Wernicke, Ingrid Koslow, Duc V. Dinh, Brian Corbett, Peter J. Parbrook, Martin Feneberg, Rüdiger Goldhahn, and Michael Kneissl
12:45 HL 50.12 Structural characterization and scanning surface potential microscopy (SSPM) of C-doped GaN layers on Sapphire — •Aqdas Fariza, Hartmut Witte, Andreas Lesnik, Jürgen Bläsing, Peter Veit, Armin Dadgar, and Andre Strittmatter
13:00 HL 50.13 Investigation of AlInN/GaN heterostructures by scanning tunneling and transmission electron microscopy — •Verena Portz, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean, Rafal Dunin-Borkowski, and Philipp Ebert
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