Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 50: Gallium Nitride: Fabrication and Characterization
HL 50.9: Vortrag
Mittwoch, 9. März 2016, 12:00–12:15, H17
Capacitance Voltage Spectroscopy of GaN Quantum Dot Ensembles — •Carlo Alberto Sgroi1, Julien Brault2, Arne Ludwig1, and Andreas D. Wieck1 — 1Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum, Germany — 2CNRS CRHEA, 06560 Valbonne, France
We present a capacitance voltage (CV) measurement of wurtzite GaN quantum dots (QDs) in an AlxGa1−xN matrix grown by MBE.
GaN and its alloys have excellent properties regarding thermal stability at ambient conditions, high thermal conductivity and wide bandgap energies, thus making it an ideal candidate for high power and high temperature microelectronic and QD devices.
Due to polarization effects in wurtzite GaN/AlxGa1−xN heterostructure layers induced intrinsically by inversion asymmetry and extrinsically by doping and strain, the band structure is deformed. Band structure simulations were run to calculate a decent tunneling barrier and estimate the quantum dot minimum to be close to the Fermi energy level with a sufficient lever arm to fill and deplete the QDs.
We used the known CV spectroscopy technique adapted to the GaN properties and measured the convoluted s- and p-states of the QDs at room temperature. The coulomb blockade energy is calculated to be 48.81 meV and the s- to p-energy difference is 126.26 meV.