Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 50: Gallium Nitride: Fabrication and Characterization

HL 50.2: Vortrag

Mittwoch, 9. März 2016, 09:45–10:00, H17

RF sputter deposition of AlN layers on different substrates — •Florian Hörich, Marc Hoffmann, Jürgen Bläsing, Armin Dadgar, and Andre Stritmatter — Otto-von-Guericke-University Magdeburg

We investigated reactive sputtering of AlN by rf-plasma deposition using an Al-Target and varying plasma conditions. The influence of substrate temperature, gas mixture, plasma pressure and magnetron power is discussed for different substrates, like Silicon (111), sapphire, and epitaxially-grown AlN buffer layers on Silicon (111).

The growth of crystalline or amorphous layers depends mostly on the substrate type. Direct growth on Si(111) substrates results in crystalline layers if an Al nucleation layer is used similar to metalorganic vapour phase epitaxy of AlN/Si(111). Epitaxially grown AlN buffer layers can be overgrown without an Al interlayer.

Further analysis performed by high resolution x-ray diffraction (HRXRD) and atomic force microscopy (AFM) will be presented for qualification of the crystalline quality and surface morphology. In particular, the substrate-layer interface is investigated to understand the nucleation processes of the sputtered AlN layers in dependence of process parameters.