Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: Transport: Graphene (Joint session of DS, DY, HL, MA, O and TT, organized by TT)

HL 51.8: Vortrag

Mittwoch, 9. März 2016, 11:45–12:00, H22

The decisive role of stacking faults for understanding transport in bilayer graphene — •Heiko B. Weber¹, Ferdinand Kisslinger¹, Christian Ott¹, and Sam Shallcross² — ¹Lehrstuhl für Angewandte Physik, FAU Erlangen-Nürnberg (FAU), Erlangen, Germany — ²Lehrstuhl für Theoretische Festkörperphysik, FAU Erlangen-Nürnberg (FAU)

Charge transport in bilayer graphene provides rich low-temperature phenomena, often assigned to interaction-driven phase transitions. We will discuss charge transport in bilayer graphene in a single-particle picture, but including stacking faults. Such partial dislocations are unavoidable in bilayer graphene and were recently imaged [1]. Depending on details, partial dislocations can introduce improved conductance, fully insulating behaviour or linear magnetoresistance. The latter is reliably found in transport experiments at elevated temperatures [2].

[1] B. Butz, C. Dolle, F. Niekiel, K. Weber, D. Waldmann,

H. B. Weber, B. Meyer, E. Spiecker, Nature 505, 533 (2014)

[2] F. Kisslinger, C. Ott, C. Heide, E. Kampert, B. Butz, E. Spiecker,

S. Shallcross, H. B. Weber, Nature Phys. 11, 650 (2015).