Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 53: Poster II

HL 53.16: Poster

Mittwoch, 9. März 2016, 09:30–13:30, Poster A

Impact of plasma parameters on the growth of InGaN nanowire heterostructures by plasma-assisted molecular beam epitaxy — •Pascal Hille¹, Felix Walther¹, Philip Klement¹, Jörg Schörmann¹, Vanessa Dahmen², Nils Rosemann², Sangam Chatterjee², Philomela Komninou³, and Martin Eickhoff¹ — ¹I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany — ²Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg, Germany — ³Physics Department, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece

Its tunable direct bandgap (UV to IR) renders (In,Ga)N nanowires a promising material platform for nano-opto electronic devices. However, the large lattice mismatch between the two binaries as well as the low decomposition temperature of InN compared to GaN leads to structural degradation of the grown material with increasing In content. Preventing InN dissociation during growth by bond stabilization might increase the material quality. For metal rich growth conditions theory predicts that an increase of the nitrogen flux should achieve such a bond stabilization and also yield an increase of the incorporated In fraction [1]. Here, we varied the nitrogen flux and the applied forward plasma power for the growth of InGaN/GaN nanowire heterostructures (NWHs) and studied the influence these variations have on the morphological and optical properties of the NWHs.

[1] Turski et al., J. Cryst. Growth 367, 115--121 (2013)