Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 53: Poster II
HL 53.18: Poster
Mittwoch, 9. März 2016, 09:30–13:30, Poster A
Intense Intrashell Luminescence of Eu-Doped ZnO Nanowires — •Torsten Lindemann1, Sebastian Geburt1, Michael Lorke2, Andreia Luisa da Rosa2, Thomas Frauenheim2, Robert Röder1, Tobias Voss3, and Carsten Ronning1 — 1Institute of Solid State Physics, Friedrich-Schiller-University Jena, Germany — 2Bremen Center for Computational Materials Science (BCCMS), University of Bremen, Germany — 3Institute of Semiconductor Technology, University of Technology Braunschweig, Germany
Semiconductor nanowires (NW) have been proposed as route towards the miniaturization of light sources and solid-state lasers. Doping of materials with rare earth (RE) elements enables new optical properties. If these elements are incorporated into host matrices, optical intra-4f transitions become possible, which consequently show long lifetimes and are therefore spectrally very sharp. Successful doping and excellent optical activation of Eu3+ ions in single crystalline zinc oxide (ZnO) NWs is realized using the ion implantation approach subsequently to growth. The origin of the intense intra-4f luminescence of Eu3+ ions in ZnO is assigned by first-principles calculations to the formation of Eu-Oi complexes within the lattice. These complexes are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 ∘C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behaviour as a function of excitation power and waveguiding properties.