Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 53: Poster II

HL 53.27: Poster

Mittwoch, 9. März 2016, 09:30–13:30, Poster A

In(Ga)As quantum dots for wideband applications — •Fabian Olbrich, Jan Kettler, Katharina Zeuner, Matthias Paul, Michael Jetter, and Peter Michler — Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen, Allmandring 3, 70569 Stuttgart

The system of InAs/GaAs quantum dots has proven to be one of the most promising candidates as a single-photon source for future applications like quantum cryptography [1] or quantum computing [2]. Therefore it seems reasonable to connect the strengths of such a semiconductor system with other platforms, e.g. optical fibers for quantum communication networks, silicon photonic circuits for combined solid state systems [3] or atomic transitions for the storage of quantum information [4].

In order to achieve the required flexibility for these quantum dot applications, we utilize the methods of depositing a strain reducing layer on top of our emitters and incorporating Ga into the quantum dot material [5].

Hence, we are able to show photoluminescence in a wavelength region ranging from typical InAs quantum dot emission at around 900 nm, above 1 μm at the silicon band gap and towards the telecom O-band at 1310 nm with an absorption minimum for optical fibers [6]. Furthermore, whilst varying the emission into the infrared spectral region, our light sources remain excellent single-photon emitters and - taking a peak at polarization entangled photons -- show consistently low fine-structure splittings.

[1] C. H. Bennett et al., J. Cryptology 5, 3-28 (1992)

[2] D. Loss et al., Physical Review A 57, 1 (1998)

[3] E. Murray et al., arXiv (2015)

[4] S. M. Ulrich et al., Physical Review B 90.12, 125310 (2014)

[5] M. Paul et al., Applied Physics Letters 106, 122105 (2015)

[6] E. F. Schubert et al., Light emitting diodes (John Wiley & Sons, Inc., 2005)