Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 53: Poster II
HL 53.31: Poster
Mittwoch, 9. März 2016, 09:30–13:30, Poster A
Ambipolar transport in GaAs/InSb core/shell nanowires — •Johanna Janßen1,3, Patrick Zellekens1,3, Franz Josef Hackemüller1,3, Fabian Haas1,3, Torsten Rieger1,3, Nataliya Demarina2,3, Mihail Lepsa1,3, Detlev Grützmacher1,3, Hans Lüth1,3, and Thomas Schäpers1,3 — 1Peter Grünberg Institute 9 — 2Peter Grünberg Institute 2, Forschungszentrum Jülich, 52425 Jülich, Germany — 3JARA - Fundamentals of Future Information Technologies
Modern epitaxial growth technology of semiconductor nanowires allows the formation of complex axial and radial heterostructures and the combination of materials comprising a large lattice mismatch. In this context, nanowires constituted by a GaAs core and a surrounding InSb shell are very interesting systems. They combine the large g-factor and carrier mobility of InSb and the possibility of band engineering by changing the diameter of the GaAs core.
In this contribution, we present field-effect measurements of GaAs/InSb core/shell nanowires at room temperature. For InSb shells with a thickness smaller or equal to 10 nm, we observe a hole dominated ambipolar transport behavior. By increasing the thickness of the InSb shell, the p-type branch of the gate-dependent conductance is suppressed until the nanowires become purely n-type for shell thicknesses larger than 30 nm. This result agrees well with theoretical calculations which predict a diameter-dependent semiconductor-to-semimetal transition for GaAs/InSb core/shell nanowires due to the formation of a type-III, i.e. broken, band alignment.