Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 59: Optical Properties II
HL 59.1: Vortrag
Mittwoch, 9. März 2016, 14:45–15:00, H10
Electro-optical polariton transistor switch — •Holger Suchomel1, Sebastian Brodbeck1, Timothy Liew2, Martin Klaas1, Sebastian Klembt1, Martin Kamp1, Sven Höfling1,3, and Christian Schneider1 — 1Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg, Am Hubland, Germany — 2Division of Physics and Applied Physics, Nanyang Technological University, 63737 Singapore, Singapore — 3SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY 16 9SS, United Kingdom
We study the propagation of an optically injected exciton-polariton condensate along a one dimensional wire under the influence of a local, electrical gate. Applying a gate voltage, results in a general redshift of the emission along the wire superimposed by a local potential dip underneath the contact. Tuning of the trap depth and taking advantage of the detuning gradient along the wire is sufficient to block the polariton flow through the contact. As a consequence of the switching process and increased field ionization of excitons, the device shows a negative differential resistance and features a pronounced bistability in the probed photocurrent.
The combination of lithographic and electro-optical potential landscape engineering results in a compact device. It works as a polariton transistor switch which is operated by an external electric field rather than a control laser beam. This makes the approach suitable for on-chip applications and complex polariton circuits.