Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 59: Optical Properties II
HL 59.5: Vortrag
Mittwoch, 9. März 2016, 15:45–16:00, H10
Carrier density driven lasing dynamics in ZnO nanowires — •Marcel Wille1, Chris Sturm1, Tom Michalsky1, Robert Röder2, Carsten Ronning2, Rüdiger Schmidt-Grund1, and Marius Grundmann1 — 1Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig — 2Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena
The laser on-time of semiconductor nanowires was currently found to be in the range of 1 - 3 ps [1]. However, the emission onset characteristics of lasing semiconductor nanowires is not yet understood in detail because of the high demand on the temporal and spatial resolution of the detection technique. We report on the lasing dynamics of CVD grown ZnO nanowires from cryogenic temperatures up to room temperature using time-resolved micro-photoluminescence (µ-PL) technique. Our studies focus on the investigation of the temperature dependent emission onset-time (ton). It turns out that ton depends strongly on the excitation power and becomes smallest in the lasing regime, with values below 5 ps. Furthermore, we observed a red shift of the dominating lasing modes in time, which was described by a carrier density induced change of the refractive index dispersion after the optical excitation. For the qualitative analysis of the observed phenomena, we extended an existing model to calculate the carrier density dependent refractive index as well as the extinction coefficient for different temperatures. [1] T.P.Sidiropoulos et al., Nature Phys. 10, 870 (2014)