Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 6: Two-dimensional Materials (Joint session of HL, DS and O, organized by HL)

HL 6.5: Vortrag

Montag, 7. März 2016, 10:30–10:45, H16

Electrochemical growth and characterization of molybdenum sulfide layers for thin film transistors — •Talha Nisar, Torsten Balster, and Veit Wagner — Jacobs University Bremen gGmbH, Campus Ring 1, 28759 Bremen, Germany

Molybdenum disulfide has attracted considerable interest for its great potential in the field of nanoelectronics due to its semiconducting and 2D nature. It has been successfully deposited by the Scotch tape method resulting in high-mobility transistors with an area of a few square microns. The state-of-the-art method for the growth of crystalline molybdenum disulfide single and multilayers is chemical vapor deposition.
In our study we use electrochemical deposition as an alternative approach to grow large area molybdenum sulfide layers. For this purpose, ammonium tetrathiomolybdate (ATTM) has been used as precursor material for the electrodeposition in cathodic regime with respect to Ag/AgCl reference electrode. The obtained layers are amorphous as could be confirmed by Raman measurements. In addition, in the UV-VIS spectra of the MoS_x (x=2..3) layer a transition at 2.4 eV is visible, which could be related to oxygen contamination. Further annealing steps in an Ar/H₂ atmosphere with an additional sulfur source at temperatures above 600^∘C are necessary to remove the oxygen and to convert the layer into crystalline MoS₂. The converted layer has to be transferred onto SiO₂/Si substrates for thin film transistor applications.