Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 61: Quantum Dots and Wires: Transport Properties
HL 61.7: Vortrag
Mittwoch, 9. März 2016, 16:45–17:00, H16
Universal Conductance Fluctuation in Ge-doped GaN Nanowires — •Patrick Uredat1, Matthias T. Elm1,2, Jan Binder2, Lars Ostheim1, Markus Schäfer1, Pascal Hille1, Jan Müssner1, Jörg Schörmann1, Martin Eickhoff1, and Peter J. Klar1 — 1I. Physikalisches Institut, Heinrich-Buff-Ring 16, Justus-Liebig-Universität Gießen, 35392 Gießen — 2Physikalisch-Chemisches Institut, Heinrich-Buff-Ring 17, Justus-Liebig-Universität Gießen, 35392 Gießen
Semiconducting III-V nanowires are not only an auspicious material system for future nanoelectronic devices, such as nanoscaled field-effect transistors, ultra-violet light-emitting diodes or other optoelectronic applications, but also an ideal model system for studying mesoscopic effects. Therefore, the transport properties of single Ge-doped GaN nanowires are investigated. Measurements reveal universal conductance fluctuations as well as a weak localization effect. The phase coherence length lφ was obtained by analyzing the quantum interference effects. For slightly doped nanowires inelastic electron-electron scattering seems to be the dominant phase breaking mechanism at low temperatures, whereas for highly doped nanowires quasi-elastic Nyquist-scattering appear to be more prominent. Temperature dependent analysis of the UCFs for different doping levels reveal a quasi one-dimensional transport behavior due to a surface depletion layer in slightly doped nanowires. In contrast, highly doped nanowires seem to have a less confined transport channel.