Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 62: Gallium Nitride: Optical and Electronic Properties
HL 62.6: Vortrag
Mittwoch, 9. März 2016, 16:00–16:15, H17
Optical and electronic properties of InGaN/GaN core-shell microrod light emitting diodes — •Marcus Müller1, Peter Veit1, Frank Bertram1, Christian Nenstiel2, Gordon Callsen2, Matin Mohajerani3, Jana Hartmann3, Hao Zhou3, Hergo-H. Wehmann3, Axel Hoffmann2, Andreas Waag3, and Jürgen Christen1 — 1Institut für Experimentelle Phssik, Otto-von-Guericke-Universität Magdeburg — 2Institut für Festkörperphysik, Technische Universität Berlin — 3Institut für Halbleitertechnik, Technische Universität Braunschweig
We present a comprehensive study of structural, optical, and electronic properties of three-dimensional, nitride-based, core-shell microrod LEDs. The InGaN/GaN microrod heterostructures were grown via the selective area growth technique by metal-organic vapor phase epitaxy. Using highly spatially resolved cathodoluminescence (CL) and Raman-spectroscopy directly performed on a thin TEM-lamella, we analyze free carrier concentrations of single Si-doped GaN core. Both, CL and Raman measurements reveal a high free carrier concentration of 6.9 · 1019 cm−3 in the bottom part and a decreasing doping level towards the tip of the microrod. Structural investigations show that initial Si-doping of the core has a strong influence on the formation of extended defects in the overgrown shells. Highly spatially resolved CL mappings of the InGaN single quantum well luminescence exhibit a red shifted emission at these defects which most probably indicates indium clustering.