Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 62: Gallium Nitride: Optical and Electronic Properties

HL 62.7: Vortrag

Mittwoch, 9. März 2016, 16:15–16:30, H17

Charge transfer across the GaN nanowire / electrolyte interface — •Jan Philipps, Sara Lippert, Pascal Hille, Jörg Schörmann, Detlev Hofmann, and Martin Eickhoff — 1. Physikalisches Institut, Justus-Liebig-Universität, Gießen, Deutschland

We have investigated the transfer processes of photogenerated charge carriers from GaN nanowires to an electrolyte environment by the means of photoluminescence, current measurements and electron paramagnetic resonance spin trap technique. We find that photogenerated holes can be transferred to the OH·/OH⁻ redox couple or can be consumed by photoanodic oxidation of the GaN surface. The efficiencies of the two processes strongly depend on the applied bias between the nanowires and the electrolyte. The presented results will be discussed considering the redox potentials in the electrolyte as well as the electronic structure of the semiconductor material and the occupation of surface states in the frame of the surface band bending model.