Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 62: Gallium Nitride: Optical and Electronic Properties
HL 62.9: Vortrag
Mittwoch, 9. März 2016, 17:15–17:30, H17
Investigation of confined exciton luminescence of PAMBE-grown AlGaN/GaN nanowires for single photon applications — •Johannes Dühn1, Pascal Hille2, Jörg Schörmann2, Martin Eickhoff2, Jürgen Gutowski1, and Kathrin Sebald1 — 1Institute of Solid State Physics, University of Bremen, Germany — 2Institute of Experimental Physics I, Justus-Liebig University, Giessen, Germany
Efficient single photon sources are of pivotal importance for experimental quantum optics and cryptography. Currently available schemes of single photon sources and detectors are subject to low signal to noise ratios, which greatly inhibits their utilisation in quantum optical applications. A promising approach to this problem is the usage of confined excitons in wide band gap materials. Because of their huge oscillator strengths, confined excitons have extraordinarily short lifetimes, thus enabling for emitters with high count rates. Due to confinement, these excitons also possess large binding energies, even exceeding the thermal energy at room temperature, which makes them suitable emitters for high-temperature operation. In this work we investigate the micro-PL properties of individual plasma-assisted (PA)MBE-grown Mg-doped single GaN nanodiscs embedded in AlGaN barriers. We identify emissions centered at 3.55eV from the nanodisc, as well as sharp emission lines at 3.35eV most likely originating from excitons bound to stacking faults in the GaN nanowire base. The emission from single excitons bound to defects are investigated with respect to their single photon emission properties by using an HBT interferometer.